BDW94C

• Material of Transistor: Si

• Polarity: PNP

• Maximum Collector Power Dissipation (Pc): 80 W

• Maximum Collector-Base Voltage |Vcb|: 100 V

• Maximum Collector-Emitter Voltage |Vce|: 100 V

• Maximum Emitter-Base Voltage |Veb|: 5 V

• Maximum Collector Current |Ic max|: 12 A

• Max. Operating Junction Temperature (Tj): 150 °C

• Transition Frequency (ft): 20 MHz

• Forward Current Transfer Ratio (hFE), MIN: 15000

• Package: TO220