BD237

• Material of Transistor: Si
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 1.3 W
• Maximum Collector-Base Voltage |Vcb|: 120 V
• Maximum Collector-Emitter Voltage |Vce|: 95 V
• Maximum Emitter-Base Voltage |Veb|: 6 V
• Maximum Collector Current |Ic max|: 2 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Transition Frequency (ft): 3 MHz
• Forward Current Transfer Ratio (hFE), MIN: 90
• Package: TO-126