IRLU024ZPBF

• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 35 W
• Maximum Drain-Source Voltage |Vds|: 55 V
• Maximum Gate-Source Voltage |Vgs|: 16 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
• Maximum Drain Current |Id|: 16 A
• Maximum Junction Temperature (Tj): 175 °C
• Rise Time (tr): 43 nS
• Drain-Source Capacitance (Cd): 180 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.058 Ohm
• Package: TO251