IRLR8203PBF

• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 140 W
• Maximum Drain-Source Voltage |Vds|: 30 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
• Maximum Drain Current |Id|: 110 A
• Maximum Junction Temperature (Tj): 175 °C
• Rise Time (tr): 99 nS
• Drain-Source Capacitance (Cd): 1200 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.0068 Ohm
• Package: TO252